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ECH8653 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

1. Good General Purpose Mosfets
2. Back To Back Mosfet
3. Bta16 600b How To Use
4. Mosfet Diagram
5. General Purpose N Mosfet

This entry was posted in Pinout and tagged MOSFET, Transistor. ICM7555 Datasheet – General Purpose Timer. China excellent provider of Mosfet Power Transistor and Tip Power Transistors, Shenzhen Hua Xuan Yang Electronics Co.,Ltd is Tip Power Transistors factory. General-purpose — UK / US adjective only before noun 1) a general purpose product or vehicle is appropriate for most situations a general purpose. HV switches with fixed on-time, general purpose, MOSFET Cost-efficient high voltage switch solution for simple pulse and discharge applications Very EMC tolerant Absolutely noise free in on and off state Low control power at high frequency The type depending on-time of 100 to 300 ns can optionally be changed to any other value from 25 ns to 100 μs. EFC4615R, datasheet for EFC4615R - N-Channel Silicon MOSFET General-Purpose Switching Device Applications provided by Sanyo Semicon Device. EFC4615R pdf documentation and EFC4615R application notes.

Наименование прибора: ECH8653

Маркировка: WY

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 1.4 W

Предельно допустимое напряжение сток-исток |Uds|: 20 V

Предельно допустимое напряжение затвор-исток |Ugs|: 10 V

Минимальное напряжение отсечки |Vgs(off)|: 1 V

Максимально допустимый постоянный ток стока |Id|: 7.5 A

Максимальная температура канала (Tj): 150 °C

Good General Purpose Mosfets

Общий заряд затвора (Qg): 18.5 nC

Время нарастания (tr): 48 ns

Выходная емкость (Cd): 170 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.02 Ohm

Тип корпуса: ECH8

ECH8653 Datasheet (PDF)

0.1. ech8653.pdf Size:264K _sanyo

Ordering number : ENA0851 ECH8653SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8653ApplicationsFeatures Low ON-resistance. 4V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ra

8.1. ech8654.pdf Size:66K _sanyo

Ordering number : ENA0981ECH8654SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8654ApplicationsFeatures Low ON-resistance. 1.8V drive. Halogen free compliance.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS

8.2. ech8657.pdf Size:345K _sanyo

Back To Back Mosfet

ECH8657Ordering number : ENA1710ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8657ApplicationsFeatures 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 35 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID

8.3. ech8659.pdf Size:409K _sanyo

ECH8659Ordering number : ENA1224ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8659ApplicationsFeatures 4V drive Composite type, facilitating high-density mounting Halogen free compliance Protection diode inSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-So

8.4. ech8656.pdf Size:382K _sanyo Champak stories in hindi pdf free download.

ECH8656Ordering number : EN9010SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8656ApplicationsFeatures ON-resistance RDS(on)1=13m (typ.) 1.8V drive Halogen free compliance Nch + Nch MOSFET Protection diode inSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings Unit

8.5. ech8652.pdf Size:68K _sanyo

Ordering number : ENA0935ECH8652SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8652ApplicationsFeatures Low ON-resistance. 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-S

8.6. ech8651r.pdf Size:63K _sanyo

Ordering number : ENA1010 ECH8651RSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8651RApplicationsFeatures Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance.SpecificationsAbsolute Maximum Ratings

8.7. ech8655r.pdf Size:64K _sanyo

Ordering number : ENA1011 ECH8655RSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8655RApplicationsFeatures Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance.SpecificationsAbsolute Maximum Ratings

Другие MOSFET.. ECH8320, ECH8410, ECH8419, ECH8601M, ECH8602M, ECH8649, ECH8651R, ECH8652, 2SK3562, ECH8654, ECH8655R, ECH8657, ECH8659, ECH8660, ECH8661, ECH8662, ECH8663R.

Bta16 600b How To Use

Список транзисторов

Обновления

MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02

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Sanyo Electric Components Datasheet P-Channel Silicon MOSFET General-Purpose Switching Device Applications No Preview Available ! www.DataSheet4U.com 2SJ635 General-Purpose Switching Device Features • Ultrahigh-speed switching. • DC / DC Converter. Absolute Maximum Ratings at Ta=25°C Drain-to-Source Voltage Drain Current (DC) Allowable Power Dissipation Storage Temperature VDSS ID PD Tstg PW≤10µs, duty cycle≤1% Electrical Characteristics at Ta=25°C Symbol Drain-to-Source Breakdown Voltage Gate-to-Source Leakage Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance IDSS VGS(off) RDS(on)1 Ciss Crss VDS=--60V, VGS=0V VDS=--10V, ID=--1mA ID=--6A, VGS=--10V VDS=--20V, f=1MHz VDS=--20V, f=1MHz --60 --12 1 150 Unit V A W °C --60 9 typ Unit --1 µA --2.6 V 45 60 mΩ 2200 235 pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Mosfet Diagram

Sanyo Electric Components Datasheet P-Channel Silicon MOSFET General-Purpose Switching Device Applications No Preview Available ! Parameter Rise Time Fall Time Gate-to-Source Charge Diode Forward Voltage unit : mm 2SJ635 td(on) td(off) Qg Qgd Conditions See specified Test Circuit. See specified Test Circuit. VDS=--30V, VGS=--10V, ID=--12A IS=--12A, VGS=0V unit : mm 6.5 2.3 4 5.0 Ratings Unit 80 ns 125 ns 10 nC --0.9 --1.2 V 0.5 0.7 123 1.2 1 : Gate 3 : Source SANYO : TP VIN --10V D.C.≤1% G ID= --6A D VOUT 2SJ635 0.85 0.6 0.5 1.2 2 : Drain 4 : Drain No.8277-2/4

General Purpose N Mosfet